![]() ![]() ![]() 3 - Texas Instruments’ UCC2753x IC family of high-speed, gate drivers can handle SiC MOSFET power switches by up to 2.5 A source and 5 A sink peak current. The UCC2753x can also feature a split-output configuration that allows the designer to apply independent turn-on and turn-off resistors to the OUTH and OUTL pins, respectively, and easily control the switching slew rates. Strong sink capability in asymmetrical drive boosts immunity against parasitic Miller turn-on effect. Texas Instruments’ UCC2753x IC family are single-channel, high-speed, gate drivers capable of driving SiC MOSFET power switches by up to 2.5 A source and 5 A sink (asymmetrical drive) peak current ( Fig. What gate drivers can be used with a SiC MOSFET? Gate driver ICs suitable for SiC MOSFETs are available from IXYS, Texas Instruments and most recently from Avago. This module can reduce power losses by 75 percent, compared with a functionally similar silicon MOSFET module. 2 - The SiC six-pack power module is housed in a standard 45 mm package. When compared to state-of-the-art silicon modules, the SiC 1.2 kV, 50 A modules deliver performance equivalent to silicon IGBT modules rated up to 150 A depending upon efficiency requirement and switching frequency. The six-pack SiC module unlocks the traditional design constraints associated with power density, efficiency and cost, thereby enabling the designer to create high performance, reliable and low cost power conversion systems. When replacing a silicon module with equivalent ratings, Cree's six-pack module reduces power losses by 75 percent, which leads to an immediate 70 percent reduction in the size of the heat sink, or a 50 percent increase in power density. This contributes to the better switching efficiency of the Gen2 device and the sizable cost reduction as well.Īre there any SiC MOSFET Power Modules? Cree introduced the industry's first commercially available all-silicon carbide (SiC) six-pack power module in an industry standard 45 mm package ( Fig. Note, in particular, the reduction in die size and associated capacitance values. Table 1 compares the key device parameters of the first and second generation parts. The second generation SiC MOSFET, C2M0080120D, was released in March 2013 and has improved performance characteristics. Although its cost was higher than the Si IGBT it was supposed to replace, the SiC MOSFETs have faster switching, better efficiency and better thermal performance. This CMF20120D transistor was rated at 1200V, had 80 mΩ on-resistance, and was housed in TO-247 package. Cree introduced the first SiC MOSFET in January 2011. However, the wafer processing challenges have been largely resolved with development of low-defect SiC wafers that make it possible to produce SiC MOSFETs. These issues have limited SiC devices to diodes in the last five years. How has the SiC transistor evolved? Adoption of SiC semiconductors has been limited by substrate costs, the material’s physical idiosyncrasies and defect density. 1 - The schematic diagram of an enhancement mode SiC MOSFET is similar to that of a silicon MOSFET, having a gate, drain, and source. The temperature coefficient of SiC MOSFET on-resistance is similar to the silicon MOSFET as it is positive, but the magnitude of RDSon change is less over the device operating range. gate-source voltage curves are similar to silicon MOSFETs. In addition, on-resistance and breakdown voltage of a SiC device have a similar meaning as their silicon counterparts. What nomenclature do SiC devices employ? SiC transistors borrowed the same nomenclature as their silicon brethren: gate, drain and source, as shown in Fig. Test Equipment Must Keep Pace with New High Power Semiconductor Developments.Design Considerations for SiC-based Power Electronics.SiC: A Rugged Power Semiconductor Compound To Be Reckoned With.SiC "Super" Junction Transistors Offer Breakthrough High Temp Performance.1200V SiC MOSFET Poised to Replace Si MOSFETs and IGBTs.SiC and GaN Vie for Slice of the Electric Vehicle Pie. ![]()
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